to-126 1. emitter 2. collector 3. base to-126 plastic-encapsulate transistors BD234/236/238 transistor (pnp) features power d issipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage BD234 bd236 bd238 -45 -60 -100 v v ceo collector-emitter voltage BD234 bd236 bd238 -45 -60 -80 v v ebo emitter-base voltage BD234 bd236 bd238 -5 v i c collector current ?continuous -2 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage BD234 bd236 bd238 v (br)cbo i c =-1ma,i e =0 -45 -60 -100 v collector-emitter breakdown voltage BD234 bd236 bd238 v (br)ceo i c =-100ma,i b =0 -45 -60 -80 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current BD234 bd236 bd238 i cbo v cb =-45v, i e =0 v cb =-60v, i e =0 v cb =-100v, i e =0 -100 a emitter cut-off current i ebo v eb =-5v, i c =0 -1 ma h fe(1) v ce =-2v, i c =-150ma 40 dc current gain h fe(2) v ce =-2v, i c =-1a 25 collector-emitter saturation voltage v ce(sat) i c =-1a, i b =-100m a -0.6 v transition frequency f t v ce =-10v, i c =-250ma, f =10mhz 3 mhz 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
|
